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Applied Physics Letters : Uniform InGaAs quantum dot arrays fabricated using nanosphere lithography

By X. Qian, J. Li, D. Wasserman, and W. D. Goodhue

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Book Id: WPLBN0002169206
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 11 December 2008

Title: Applied Physics Letters : Uniform InGaAs quantum dot arrays fabricated using nanosphere lithography  
Author: X. Qian, J. Li, D. Wasserman, and W. D. Goodhue
Volume: Issue : December 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection (Contemporary), Applied Physics Letters Collection
Historic
Publication Date:
Publisher: American Institute of Physics

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J. Li, D. Wasserman, And W. D. Goodhu, X. Q. (n.d.). Applied Physics Letters : Uniform InGaAs quantum dot arrays fabricated using nanosphere lithography. Retrieved from http://hawaiilibrary.net/


Description
Description: We demonstrate the fabrication of optically active uniform InGaAs quantum dot arrays by combining nanosphere lithography and bromine ion-beam-assisted etching on a single InGaAs/ GaAs quantum well. A wide range of lateral dot sizes was achieved from an oxygen plasma nanosphere resizing process. The increased lateral confinement of carriers in the dots results in low temperature photoluminescence blueshifts from 0.5 to 11 meV. Additional quantization was achieved using a selective wet-etch process. Our model suggests the presence of a 70 nm dead layer in the outer InGaAs radial edge, which we believe to be a result of defects and dislocations introduced during the dry-etch process.

 

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