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Applied Physics Letters : Measurement and evaluation of the interfacial thermal resistance between a metal and a dielectric

By Heng-Chieh Chien, Da-Jeng Yao, and Cheng-Ting Hsu

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Book Id: WPLBN0002169209
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 11 December 2008

Title: Applied Physics Letters : Measurement and evaluation of the interfacial thermal resistance between a metal and a dielectric  
Author: Heng-Chieh Chien, Da-Jeng Yao, and Cheng-Ting Hsu
Volume: Issue : December 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection (Contemporary), Applied Physics Letters Collection
Historic
Publication Date:
Publisher: American Institute of Physics

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Da-Jeng Yao, And Cheng-Ting Hs, H. C. (n.d.). Applied Physics Letters : Measurement and evaluation of the interfacial thermal resistance between a metal and a dielectric. Retrieved from http://hawaiilibrary.net/


Description
Description: We used a sandwiched film structure of dielectric, metal, and dielectric to measure and also to estimate theoretically the metal-dielectric interfacial thermal resistance. In this structure, a metal layer with a thickness of about 10 nm, including chromium, titanium, aluminum, nickel, and platinum, is sandwiched between two SiO2 layers with a thickness of 100 nm prepared by plasma enhanced chemical vapor deposition. The estimates, 10−10–10−9 m2 K W−1, calculated with a continuum two-fluid model are significantly smaller than the measured values, 10−8 m2 K W−1. The continuum two-fluid model, according to the phenomena of electron-phonon nonequilibrium near the interface in a metal, cannot explain completely the cause of this metal-dielectric interfacial thermal resistance. From photographs of the transmission electron microscopy cross section, we argue that defects at an interface likely play an important role in the magnitude of the interfacial thermal resistance.

 

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