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Applied Physics Letters : The chemical and electronic surface and interface structure of CuGaSe2 thin-film solar cell absorbers

By M. Bär, M. Rusu, S. Lehmann, Th. Schedel-Niedrig, I. Lauermann et al

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Book Id: WPLBN0002169215
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 11 December 2008

Title: Applied Physics Letters : The chemical and electronic surface and interface structure of CuGaSe2 thin-film solar cell absorbers  
Author: M. Bär, M. Rusu, S. Lehmann, Th. Schedel-Niedrig, I. Lauermann et al
Volume: Issue : December 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection, Applied Physics Letters Collection
Historic
Publication Date:
Publisher: American Institute of Physics

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M. Rusu, S. Lehmann, Th. Schedel-Niedrig, I. Lauermann Et A, M. B. (n.d.). Applied Physics Letters : The chemical and electronic surface and interface structure of CuGaSe2 thin-film solar cell absorbers. Retrieved from http://hawaiilibrary.net/


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Description: The chemical and electronic surface and interface structure of CuGaSe2 thin films was investigated by photoelectron spectroscopy. With bulk [Ga]/[Cu] ratios increasing from 0.94 to 1.39 a transition of the Cu:Ga:Se surface composition from 1:1:2 to 1:3:5 and a downward shift of the valence band maximum with respect to the Fermi energy were observed. The comparison with the conduction band minimum (CBM) of CdS reveals that at the CdS/CuGaSe2 interface the recombination barrier height simultaneously increases and a “clifflike” offset is formed to the CBM of CuGaSe2.

 

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