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Journal of Applied Physics : Growth and field emission characteristics of diamond films on macroporous silicon substrate

By S. K. Arora, S. Chhoker, N. K. Sharma, V. N. Singh, and V. D. Vankar

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Book Id: WPLBN0002169364
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 20 November 2008

Title: Journal of Applied Physics : Growth and field emission characteristics of diamond films on macroporous silicon substrate  
Author: S. K. Arora, S. Chhoker, N. K. Sharma, V. N. Singh, and V. D. Vankar
Volume: Issue : November 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection (Contemporary), Journal of Applied Physics Collection
Historic
Publication Date:
Publisher: American Institute of Physics

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Arora, S. Chhoker, N. K. Sharma, V. N. Singh, And V. D. Vanka, S. K. (n.d.). Journal of Applied Physics : Growth and field emission characteristics of diamond films on macroporous silicon substrate. Retrieved from http://hawaiilibrary.net/


Description
Description: The effect of substrate pretreatments such as ultrasonication or scratching by diamond powder on the microstructure and field emission characteristics of diamond grown over silicon and macroporous (anodized) silicon substrates was investigated. These films were grown in a hot filament chemical vapor deposition (CVD) system. Scanning electron microscope (SEM) studies revealed that ultrasonic pretreatment of the substrates increases nucleation density of CVD diamond by two orders of magnitude. Atomic force microscopy and energy dispersive x-ray analysis of the substrates showed that seeding is responsible for the enhanced nucleation density of diamond. SEM study showed that diamond powder scratching of porous silicon leads to uniform coverage of the substrate by the CVD diamond. Cross-sectional SEM showed growth of diamond inside the pores only after pretreating porous silicon with diamond powder. Raman spectroscopy of all the samples showed a scattering peak corresponding to diamond. Discontinuous diamond films also exhibited Raman bands corresponding to nanocrystalline diamond, diamondlike carbon, graphite, and silicon carbide. The presence of these phases of carbon was further confirmed by high resolution transmission electron microscopy studies. Field emission studies revealed that discontinuous diamond films grown on porous silicon (after diamond powder ultrasonic pretreatment) had the lowest threshold field (5.4 V/μm).

 

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