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Journal of Applied Physics : Effects of indium segregation on optical properties of nitrogen-doped InAs/GaAs quantum dots

By Tomoya Inoue, Masataka Mamizuka, Hiroshi Mizuno, Osamu Kojima, Takashi Kita et al

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Book Id: WPLBN0002169372
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 24 November 2008

Title: Journal of Applied Physics : Effects of indium segregation on optical properties of nitrogen-doped InAs/GaAs quantum dots  
Author: Tomoya Inoue, Masataka Mamizuka, Hiroshi Mizuno, Osamu Kojima, Takashi Kita et al
Volume: Issue : November 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection (Contemporary), Journal of Applied Physics Collection
Historic
Publication Date:
Publisher: American Institute of Physics

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Masataka Mamizuka, Hiroshi Mizuno, Osamu Kojima, Takashi Kita Et A, T. I. (n.d.). Journal of Applied Physics : Effects of indium segregation on optical properties of nitrogen-doped InAs/GaAs quantum dots. Retrieved from http://hawaiilibrary.net/


Description
Description: The emission wavelength of InAs quantum dots (QDs) capped by GaAs is found to be systematically controlled by doping nitrogen on the QDs surface with a thin spacer layer in between QDs and the nitrogen-doped layer. Cross-sectional transmission electron microscope images of the nitrogen-doped QD indicate that the nitrogen-doped layer acts as a blocking layer for In segregation. Furthermore, the in-plane linear polarization of the emission has been demonstrated to be controlled by the spacer layer thickness.

 

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