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Journal of Applied Physics : Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method

By A. Z. Simões, E. C. Aguiar, A. H. M. Gonzalez, J. Andrés, E. Longo et al

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Book Id: WPLBN0002169432
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 24 November 2008

Title: Journal of Applied Physics : Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method  
Author: A. Z. Simões, E. C. Aguiar, A. H. M. Gonzalez, J. Andrés, E. Longo et al
Volume: Issue : November 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection (Contemporary), Journal of Applied Physics Collection
Historic
Publication Date:
Publisher: American Institute of Physics

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Simões, E. C. Aguiar, A. H. M. Gonzalez, J. Andrés, E. Longo Et A, A. Z. (n.d.). Journal of Applied Physics : Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method. Retrieved from http://hawaiilibrary.net/


Description
Description: Pure and lanthanum modified BFO (LaxBi1−xFeO3, x = 0.0, 0.08, 0.15, 0.30) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the soft chemical method. The effect of La substitution on the structural and electrical properties was studied. Scanning electron microscopy, x-ray diffraction, and Raman spectroscopy have been employed to characterize the thin films while the piezoelectric measurements were carried out using a setup based on an atomic force microscope. It was found that La-doped BFO thin films exhibited good ferroelectric properties, such as improved leakage current density and retention-free characteristics. The unipolar strain is strongly reduced by the amount of lanthanum added to the system.

 

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