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Catalytic Metal-gate Field Effect Transistors Based on Sic for Indoor Air Quality Control : Volume 4, Issue 1 (06/01/2015)

By Puglisi, D.

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Book Id: WPLBN0003978463
Format Type: PDF Article :
File Size: Pages 8
Reproduction Date: 2015

Title: Catalytic Metal-gate Field Effect Transistors Based on Sic for Indoor Air Quality Control : Volume 4, Issue 1 (06/01/2015)  
Author: Puglisi, D.
Volume: Vol. 4, Issue 1
Language: English
Subject: Science, Journal, Sensors
Collections: Periodicals: Journal and Magazine Collection (Contemporary), Copernicus GmbH
Historic
Publication Date:
2015
Publisher: Copernicus Gmbh, Göttingen, Germany
Member Page: Copernicus Publications

Citation

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Eriksson, J., Schuetze, A., Bur, C., Andersson, M., Puglisi, D., & Spetz, A. L. (2015). Catalytic Metal-gate Field Effect Transistors Based on Sic for Indoor Air Quality Control : Volume 4, Issue 1 (06/01/2015). Retrieved from http://hawaiilibrary.net/


Description
Description: Department of Physics, Chemistry and Biology, Applied Sensor Science, Linköping University, 58183 Linköping, Sweden. High-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoor air quality monitoring and control. Formaldehyde, naphthalene, and benzene were studied as hazardous VOCs at parts per billion (ppb) down to sub-ppb levels. The sensor performance and characteristics were investigated at a constant temperature of 330 °C and at different levels of relative humidity up to 60%, showing good stability and repeatability of the sensor response, and excellent detection limits in the sub-ppb range.

Summary
Catalytic metal-gate field effect transistors based on SiC for indoor air quality control

Excerpt
Agency for Toxic Substances and Disease Registry: United States Department of Health and Human Services, Public Health Service, Toxicological Profile for Naphthalene, 1-methylnaphthalene, and 2-methylnaphthalene, updated September 2010.; Andersson, M., Pearce, R., and Lloyd Spetz, A.: New generation SiC based Field Effect Transistor Gas Sensors, Sensor. Actuat. B-Chem., 167, 95–106, 2013.; Ashmore, M. R. and Dimitroulopoulou, C.: Personal exposure of children to air pollution, Atmos. Environ., 43, 128–141, 2009.; Andersson, M., Petersson, H., Padban, N., Larfeldt, J., Holmberg, M., and Lloyd Spetz, A.: The characteristics and utility of SiC-FE gas sensors for control of combustion in domestic heating systems, Proc. 3th IEEE Int. Conf. on Sensors, Vienna, Austria, 24–27 October, 1157–1160, 2004.; ATEB-EPA (Air Toxicology and Epidemiology Branch, Office of Environmental Health Hazard Assessment, California Environmental Protection Agency): Technical Support Document for the Derivation of Noncancer Reference Exposure Levels. Appendix D: Individual Acute, 8-Hour, and Chronic Reference Exposure Level Summaries, 145 pp., 388, 404, December 2008 (updated July 2014).; Bur, C., Reimann, P., Andersson, M., Lloyd Spetz, A., and Schütze, A.: Increasing the Selectivity of Pt-Gate SiC Field Effect Gas Sensors by Dynamic Temperature Modulation, IEEE Sens. J., 12, 1906–1913, 2012.; Bur, C., Andersson, M., Lloyd Spetz, A., and Schuetze, A.: Detecting Volatile Organic Compounds in the ppb Range with Gas Sensitive Platinum gate SiC-Field Effect Transistors, IEEE Sens. J., 14, 3221–3228, 2014.; EPA (United States Environmental Protection Agency): Indoor Air, Volatile Organic Compound (VOCs), Technical Overview, updated 9 November 2012.; Eriksson, M., Salomonsson, A., Lundström, I., Briand, D., and Åbom, A. E.: The influence of the insulator surface properties on the hydrogen response of field-effect gas sensors, J. Appl. Phys., 98, 34903–34908, 2005.; French Decree no. 2011-1727: Related to formaldehyde and benzene guide values for indoor air, December 2, 2011.; Gervais, J., Luukinen, B., Buhl, K., and Stone, D.: Naphthalene Technical Fact Sheet, National Pesticide Information Center, Oregon State University Extension Services, 2010.; Granham, C. I.: High-performance HVAC, Viridian Energy & Environmental, LLC, available at: http://www.wbdg.org/resources/hvac.php (last access: August 2014), 2009.; Helwig, N., Schüler, M., Bur, C., Schütze, A., and Sauerwald, T.: Gas mixing apparatus for automated gas sensor characterization, Measurement Science and Technology, 25, 9 pp., 055903, doi:10.1088/0957-0233/25/5/055903, 2014.; Lloyd Spetz, A., Nakagomi, S., and Savage, S.: High-Temperature SiC-FET Chemical Gas Sensors, in: Advances in Silicon Carbide Processing and Applications, edited by: Saddow, S. E. and Agarwal, A., Artech House, Inc., Chapter 2, 29–67, 2004.; Lloyd Spetz, A., Darmastuti, Z., Bur, C., Huotari, J., Bjorklund, R., Lindqvist, N., Lappalainen, J., Jantunen, H., Schuetze, A., and Andersson, M.: Improved chemical sensors track and control emissions, SPIE Newsroom, 1 May, 2013a.; Lloyd Spetz, A., Huotari, J., Bur, C., Bjorklund, R., Lappalainen, J., Jantunen, H., Schuetze, A., and Andersson, M.: Chemical sensor systems for emission control from combustion, Sensor. Actuat. B-Chem., 187, 184–190, 2013b.; Puglisi, D., Eriksson, J., Bur, C., Schütze, A., Lloyd Spetz, A., and Andersson, M.: Silicon carbide field effect transistors for detection of ultra-low concentrations of hazardous volatile organic compounds, Mat. Sci. Forum, 778–780, 1067–1070, 2014.; Rumchev, K. B., Spickett, J. T., Bulsara, M. K., Phillips, M. R., and Stick, S. M.: Domestic exposure to formaldehyde significantly increases the risk of asthma in young children, Eur. Respir. J., 20, 403–408, 2002.; Salonen, H., Pasanen, A.-L., Lappalainen

 

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